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Fabricante Taiwan Semiconductor
Condición de almacenamiento Dry storage cabinet & Humidity protection package
Número de pieza Win Source 1274355-TS4268CS50
Página de Inicio del Fabricante www.taiwansemi.com
Popularidad Medium
Amenaza de Falsificación en el Mercado Abierto 71 pct.
Estado de Oferta y Demanda Limited
Modelo 3D de Ultra Librarian Ultra Librarian TS4268CS50 Modelo CAD

Descripción

The TS4268CS50 is a high-voltage, high-current N-channel power MOSFET from Taiwan Semiconductor. It's designed for applications requiring efficient power switching, particularly in power supplies and motor control circuits. Its robust design enables it to handle significant voltage and current levels, making it suitable for demanding applications.

Applications:

  • Switch-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • Motor control circuits
  • DC-DC converters
  • Lighting ballast circuits

Features:

  • High voltage capability: Handles voltages up to 500V.
  • Low on-resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
  • Fast switching speed: Reduces switching losses.
  • Avalanche rated: Withstands transient voltage spikes.
  • Temperature stability: Reliable performance across a wide temperature range.

Benefits:

  • Improved efficiency: Lower RDS(on) leads to reduced power loss and higher efficiency in power switching applications.
  • Enhanced reliability: High voltage and avalanche ratings provide robustness and protection against voltage transients.
  • Simplified design: Fast switching speed simplifies the design of high-frequency power converters.
  • Reduced heat dissipation: Lower power dissipation due to low RDS(on) reduces the need for heat sinking.
  • Cost-effective solution: Provides a balance of performance and cost for a wide range of power switching applications.

Additional Details:

The TS4268CS50 is typically supplied in a TO-252 package. It has a gate threshold voltage typically around 3V. The maximum drain current is typically around 10A, but this value can vary based on operating temperature and conditions. The gate charge is specified in the datasheet, which is an important parameter for optimizing drive circuitry and switching performance. This MOSFET is designed for high-side switching and other applications where a high-voltage, high-current N-channel device is needed. Careful consideration of thermal management is essential in high-power applications to ensure the MOSFET operates within its safe operating area. Consult the manufacturer's datasheet for detailed specifications and application guidelines.

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