STW18N65M5 - N-channel 650 V, 0.150 Ohm typ., 13 A MDmesh™ M5 Power MOSFET in a TO-247 package by STMicroelectronics

The STW18N65M5 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed with the innovative MDmesh™ M5 technology. This Power MOSFET is tailored for high-efficiency applications, thanks to its outstanding on-resistance and switching performance. Encased in a robust TO-247 package, the STW18N65M5 is engineered to handle a high continuous current of 13 A, making it an excellent choice for a wide range of power conversion applications.

With a breakdown voltage of 650 V, the STW18N65M5 ensures safe operation even under high voltage conditions, providing a reliable solution for power supply designers. The device's low on-resistance of just 0.150 Ohm typ. contributes to reduced conduction losses, improving overall system efficiency. This feature, combined with the MOSFET's fast-switching capabilities, allows for high-performance power conversion in applications such as switched-mode power supplies, LED lighting, welding equipment, and solar inverters.

The MDmesh™ M5 technology integrates a vertical structure that optimizes the RDS(on) area figure of merit, providing an excellent trade-off between on-resistance and gate charge. This results in lower switching and conduction losses, which is critical for energy-saving in power applications. The STW18N65M5 also includes a fast body diode, which enhances performance during hard switching events and reduces recovery times, further improving the efficiency of the applications it's used in.

Additional features of the STW18N65M5 include a 100% avalanche tested ruggedness, which ensures reliability and longevity, and a high dv/dt capability, which provides robustness against harsh operating conditions. The device is also designed to meet the stringent industrial standards, offering a high level of performance and reliability that designers have come to expect from STMicroelectronics.

In summary, the STW18N65M5 from STMicroelectronics is a high-voltage, high-efficiency Power MOSFET that is ideal for modern high-performance power conversion systems. Its advanced technology, low on-resistance, and fast switching characteristics make it a top choice for engineers looking to optimize their power designs for efficiency and reliability.