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Categoría Discrete Semiconductor Products
Familia RFFETs
Fabricante NXP
Condición de almacenamiento Dry storage cabinet & Humidity protection package
Número de pieza Win Source 236102-BLF6G22-180PN,112
Popularidad Low
Amenaza de Falsificación en el Mercado Abierto 65 pct.
Estado de Oferta y Demanda Limited
Nombre de la familia BLF6G22-180PN
Fecha de Introducción December 07, 2015
ECCN EAR99
País de Origen Philippines
Libre de Halógenos Compliant
Fecha Estimada de Fin de Vida Útil (EOL) Obsolete / End of life
Modelo 3D de Ultra Librarian Ultra Librarian BLF6G22-180PN,112 Modelo CAD

Descripción

The NXP BLF6G22-180PN,112 is a cutting-edge LDMOS power transistor designed for a wide range of RF power applications. This high-performance product offers exceptional efficiency and gain, making it an ideal choice for broadcast transmitters, industrial, scientific, and medical (ISM) applications, as well as radio and VHF TV broadcast, aerospace, and mobile radio systems.

Key Features

  • High Efficiency: The BLF6G22-180PN,112 boasts an impressive efficiency, reducing energy consumption and heat dissipation, which leads to a longer lifespan and lower operating costs.
  • Wide Frequency Range: This transistor is capable of operating over a broad frequency range, offering versatility and making it suitable for various applications.
  • High Power Gain: It provides a high power gain, ensuring strong signal amplification and improved performance of the end application.
  • Easy Integration: The product comes in a user-friendly package, making it easy to integrate into existing systems with minimal hassle.
  • Durable Construction: Manufactured with high-quality materials, the BLF6G22-180PN,112 is built to withstand the rigors of demanding applications.

Applications

  • Broadcast transmitters for radio and VHF TV
  • Industrial, scientific, and medical (ISM) applications
  • Professional mobile radio systems
  • Aerospace applications

Product Specifications

The BLF6G22-180PN,112 operates at a frequency range up to 225 MHz, with an excellent thermal stability. It is capable of delivering a powerful output of up to 180W, ensuring robust performance for high-demand systems. The transistor is housed in a SOT539A package, which is designed to optimize thermal performance and reliability.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and the BLF6G22-180PN,112 is no exception. Each transistor is meticulously engineered and tested to meet the highest standards of performance and durability. Customers can trust this product to deliver reliable operation even in the most challenging environments.

Whether you're designing a new system or upgrading an existing one, the NXP BLF6G22-180PN,112 power transistor is a superb choice that combines efficiency, versatility, and reliability.

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Precios y pedidos

Cantidad Precio unitario Precio ext.
1+ $82.1053 $82.1053
2+ $67.3684 $134.7368
3+ $65.2632 $195.7896
4+ $63.1579 $252.6316
5+ $61.0527 $305.2635
7+ $54.7369 $383.1583
!
Los precios están sujetos al mercado y se confirmarán después de realizar el pedido.
* Los precios no incluyen envío ni impuestos. Los costos de envío se calculan al finalizar la compra.
Disponibilidad: 20 piezas
Incremento del pedido : 1 pcs
¿Necesita más unidades? Solicite un presupuesto para grandes cantidades.

Información de envío

Enviado desde Almacén de HK
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