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Categoría Integrated Circuits (ICs) - Memory - Memory
Fabricante Maxim Integrated
Encapsulado Tube
Estado del Producto Obsolete
Programable Not Verified
Tipo de memoria Non-Volatile
Formato de Memoria NVSRAM
Tecnología NVSRAM (Non-Volatile SRAM)
Tamaño de la memoria 256Kbit
Organización de Memoria 32K x 8
Interfaz de Memoria Parallel
Tiempo de Ciclo de Escritura - Palabra, Página 200ns
Tiempo de acceso 200 ns
Voltaje - Suministro 4.75V ~ 5.25V
Rango de Temperatura - Funcionamiento 0°C ~ 70°C (TA)
Tipo de Montaje Through Hole
Paquete / Caja 28-DIP Module (0.600", 15.24mm)
Paquete del Dispositivo del Proveedor 28-EDIP
Número de Producto Base DS1230AB
Paquete estándar 12 pcs
Nivel MSL 1 (Unlimited)
Estado REACH REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0041
Número de pieza Win Source 586059-DS1230AB-200
Amenaza de Falsificación en el Mercado Abierto 58pct.
Modelo 3D de Ultra Librarian Ultra Librarian DS1230AB-200 Modelo CAD

Descripción

The DS1230AB-200 from Maxim Integrated is a high-quality, nonvolatile SRAM module that offers 256k of memory. This innovative product combines the access speed of static RAM with a nonvolatile storage component, ensuring data preservation even after power loss. With a wide voltage range and low power consumption, the DS1230AB-200 is an excellent choice for a multitude of applications that require reliable and long-term data retention without the need for a battery.

The DS1230AB-200 operates at a speed of 200 ns, providing swift access to data, which is crucial for high-performance computing tasks. It features an automatic power-fail chip-enable gating, ensuring data integrity during power transitions. The module's nonvolatility is achieved through an internal lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition is detected, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.

This SRAM module is designed with a 10% to 15% overhead in its energy source, which guarantees that the RAM's nonvolatile functionality will be maintained for a minimum of 10 years. The DS1230AB-200 is packaged in a 28-pin, 600-mil EDIP or 300-mil SOIC, providing flexibility for various design configurations. It is also fully compatible with the JEDEC standard, which ensures easy integration into existing systems without the need for additional hardware or software changes.

Key features of the DS1230AB-200 include:

  • 256k Nonvolatile SRAM
  • 200 ns Access Time
  • Automatic power-fail chip-enable gating
  • 10-year data retention in the absence of external power
  • Directly replaces volatile static RAM or EEPROM
  • 28-pin EDIP or 300-mil SOIC options

Whether it's for industrial control systems, data collection devices, or critical memory backup, the Maxim Integrated DS1230AB-200 Nonvolatile SRAM is a robust and reliable choice that ensures your data is safe, accessible, and preserved across power cycles.

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