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Categoría Discrete Semiconductor Products>Diodes - Rectifiers - Single
Fabricante Littelfuse Inc.
Serie Gen2
Encapsulado Tube
Estado del Producto Obsolete
Tipo de diodo Silicon Carbide Schottky
Voltaje - Inverso CC (Vr) (Máx.) 1200 V
Corriente - Rectificada promedio (Io) 44A (DC)
Voltaje - Directo (Vf) (Máx.) @ If 1.8 V @ 15 A
Velocidad No Recovery Time > 500mA (Io)
Tiempo de recuperación inversa (trr) 0 ns
Corriente - Fuga inversa @ Vr 100 µA @ 1200 V
Capacitancia @ Vr, F 920pF @ 1V, 1MHz
Tipo de Montaje Through Hole
Paquete / Caja TO-220-2
Paquete del Dispositivo del Proveedor TO-220AC
Temperatura de funcionamiento - Unión -55°C ~ 175°C
Nivel MSL Not Applicable
ECCN EAR99
HTSUS 8541.10.0080
Otros Nombres F10719,-LSIC2SD120A15
Paquete estándar 1,000
Número de pieza Win Source 1071155-LSIC2SD120A15
Amenaza de Falsificación en el Mercado Abierto 85 pct.
Modelo 3D de Ultra Librarian Ultra Librarian LSIC2SD120A15 Modelo CAD

Descripción

The LSIC2SD120A15 is a Silicon Carbide (SiC) Schottky Diode manufactured by Littelfuse Inc. These diodes are designed for high-performance power electronics applications, offering superior switching characteristics, higher efficiency, and improved thermal performance compared to traditional silicon diodes. SiC Schottky Diodes are crucial in applications demanding fast recovery and low forward voltage drop.

Applications

  • Power Factor Correction (PFC) circuits: Improving the power factor in power supplies and converters.
  • Boost converters: Increasing voltage levels in DC-DC converters.
  • Motor drives: Enhancing the efficiency and performance of motor control systems.
  • Solar inverters: Converting DC power from solar panels to AC power for grid connection.
  • Electric vehicle (EV) chargers: Providing efficient and fast charging for electric vehicles.

Features

  • Silicon Carbide (SiC) Technology: Offers superior switching performance and thermal conductivity compared to silicon.
  • High voltage rating: Designed to withstand high reverse voltages (e.g., 1200V).
  • Low forward voltage drop (Vf): Reduces power loss and improves efficiency.
  • Zero reverse recovery current: Eliminates reverse recovery losses and reduces EMI.
  • High surge current capability: Withstands high surge currents during transient events.

Benefits

  • Improved efficiency: Reduces power loss in power electronic systems, leading to energy savings.
  • Faster switching speeds: Enables higher switching frequencies, reducing the size and cost of passive components.
  • Reduced heat generation: Improves thermal management and extends the lifespan of the device.
  • Enhanced system reliability: Offers superior robustness and reliability compared to silicon diodes.
  • Compact design: Allows for smaller and lighter power electronic systems.

Additional Details

The LSIC2SD120A15 is typically available in various through-hole and surface-mount packages. Proper heat sinking is essential for optimal performance. Refer to the Littelfuse datasheet for detailed specifications, including voltage and current ratings, thermal resistance, and switching characteristics. Consider the operating temperature range and derating factors for reliable operation. These diodes are sensitive to electrostatic discharge (ESD) and should be handled with appropriate precautions. They often come in packages like TO-247 or similar for heat dissipation.

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Precios y pedidos

Cantidad Precio unitario Precio ext.
5+ $14.7022 $73.5110
11+ $12.0635 $132.6985
17+ $11.6865 $198.6705
23+ $11.3096 $260.1208
30+ $10.9324 $327.9720
40+ $9.8016 $392.0640
* Los precios no incluyen envío ni impuestos. Los costos de envío se calculan al finalizar la compra.
Disponibilidad: 410 piezas
MOQ: 5 piezas
Incremento del pedido : 1 pcs
¿Necesita más unidades? Solicite un presupuesto para grandes cantidades.

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