The 2SC3198 is an NPN silicon epitaxial transistor manufactured by KEC (Korea Electronics Co., Ltd.). This transistor is designed for general-purpose amplification and switching applications. It features a high current gain and a relatively low saturation voltage, making it suitable for a wide range of electronic circuits.

Applications

• General-purpose amplification
• Switching circuits
• Driver stages for LEDs and relays
• Audio pre-amplifiers
• Linear regulators

Features

• High current gain (hFE): Provides substantial amplification of signals.
• Low saturation voltage (VCE(sat)): Reduces power dissipation and improves efficiency.
• Epitaxial construction: Enhances reliability and performance.
• Compact package: Facilitates high-density mounting on printed circuit boards (PCBs).
• RoHS compliant: Complies with environmental regulations, being lead-free.

Benefits

• Efficient amplification: High current gain enables efficient signal processing.
• Reduced power consumption: Low saturation voltage minimizes power loss in switching applications.
• Reliable operation: Robust design ensures consistent performance.
• Simplified circuit design: Easy to integrate into new and existing designs.
• Environmentally friendly: RoHS compliance reduces environmental impact.

Technical Specifications

While specific technical specifications such as DC Current Gain (hFE) and Collector-Emitter Voltage (VCEO) should be verified using the KEC datasheet for the 2SC3198, typical values include:

• VCEO (Collector-Emitter Voltage): 50V (example)
• IC (Collector Current): 0.15A (example)
• hFE (DC Current Gain): 200 - 400 (example, dependent on IC)
• VCE(sat) (Collector-Emitter Saturation Voltage): 0.3V (example, at specific IC and IB)
• Package: TO-92 (example)

For detailed specifications, including absolute maximum ratings, electrical characteristics, and thermal resistance, refer to the official datasheet provided by KEC. This information is critical for ensuring proper application and preventing damage to the transistor.