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Fabricante Silicon Standard Corp.
Condición de almacenamiento Dry storage cabinet & Humidity protection package
Número de pieza Win Source 1259621-SSM70T03GJ
Página de Inicio del Fabricante www.siliconstandard.com
Materias Primas Based on silicon element (Si) ; Blue-grey metallic luster
Popularidad Medium
Amenaza de Falsificación en el Mercado Abierto 57 pct.
Estado de Oferta y Demanda Balance
Modelos ECAD Contact us to download
Hoja de Datos de Seguridad del Material (MSDS) Get Access
Modelo 3D de Ultra Librarian Ultra Librarian SSM70T03GJ Modelo CAD

Descripción

The SSM70T03GJ is a P-Channel MOSFET manufactured by Silicon Standard Corp. It is designed for use in power management applications such as load switching, power inverters, and DC-DC converters. Its low on-resistance (RDS(on)) minimizes power loss and improves efficiency.

Applications:

  • Load Switching: Controlling power to various loads in electronic systems.
  • Power Management: Efficient power distribution and regulation in portable devices.
  • DC-DC Converters: Switching element in DC-DC voltage conversion circuits.
  • Power Inverters: Converting DC power to AC power.
  • Battery Management Systems: Protection and control of battery charging and discharging.

Features:

  • P-Channel MOSFET: Allows for simpler gate drive circuitry compared to N-channel MOSFETs in certain applications.
  • Low On-Resistance (RDS(on)): Reduces power loss and improves efficiency.
  • Low Gate Threshold Voltage (VGS(th)): Enables operation with low voltage logic levels.
  • High Drain Current (ID): Capable of handling significant current loads.
  • Surface Mount Package: SOP-8 package for efficient PCB assembly.

Benefits:

  • High Efficiency: Low RDS(on) minimizes power dissipation.
  • Simplified Gate Drive: Easier to drive in certain applications.
  • Compact Size: SOP-8 package saves board space.
  • Reliable Performance: Stable characteristics over a wide range of operating conditions.
  • Suitable for Battery-Powered Applications: Low gate threshold voltage for operation with low supply voltages.

Technical Specifications:

The SSM70T03GJ features a drain-source voltage (VDS) of typically -30V. The gate-source voltage (VGS) is typically ±20V. The continuous drain current (ID) is around -7A. The on-resistance (RDS(on)) is low, typically around 25 mΩ at VGS = -10V. The gate threshold voltage (VGS(th)) is typically between -1V and -3V. The device is packaged in a SOP-8 package. The operating temperature range is from -55°C to +150°C. This MOSFET's low on-resistance and low gate threshold voltage make it well-suited for applications requiring high efficiency and compatibility with low-voltage logic.

The SSM70T03GJ P-Channel MOSFET provides an efficient and reliable solution for power management and switching applications. Its low on-resistance and compact size make it suitable for a wide range of electronic devices, particularly those requiring high efficiency and low voltage operation.

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