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Especificaciones del producto ¿Informar de un problema?

RoHS Non-Compliant
Número de pieza Win Source 1088244-RFP60P03
Categorías OEM Parts(O-R)
Fabricante Intersil
Condición de almacenamiento Dry storage cabinet & Humidity protection package
Popularidad Low
Amenaza de Falsificación en el Mercado Abierto 49 pct.
Estado de Oferta y Demanda Shortage
Modelo 3D de Ultra Librarian Ultra Librarian RFP60P03 Modelo CAD

Descripción

The RFP60P03 is a P-channel power MOSFET manufactured by Intersil. This MOSFET is designed for high-speed switching applications and is commonly used in power supplies, motor control, and load switching. Its P-channel configuration makes it suitable for applications where a high-side switch is required.

Applications:

  • Power Supplies: Used as a switching element in power supplies for various electronic devices.
  • Motor Control: Controls the speed and direction of motors in automotive and industrial applications.
  • Load Switching: Used as a high-side switch to control power to various loads.
  • DC-DC Converters: Used in DC-DC converters for voltage regulation.
  • Battery Management Systems: Used for battery charging and discharging control.

Features:

  • P-Channel MOSFET: Designed for high-side switching applications.
  • Low On-Resistance (RDS(on)): Reduces power dissipation and improves efficiency.
  • Fast Switching Speed: Enables high-frequency operation.
  • High Current Capability: Handles high current loads.
  • Avalanche Energy Rated: Provides robustness against voltage spikes.

Benefits:

  • Efficient Switching: Low on-resistance ensures efficient power transfer.
  • High-Side Switching: P-channel configuration simplifies high-side switching applications.
  • Robust Performance: Avalanche energy rating provides protection against voltage transients.
  • Reduced Power Loss: Low on-resistance minimizes power dissipation.
  • Versatile Application: Suitable for a wide range of power control applications.

Additional Details:

The RFP60P03 typically features a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of around 60A. The gate threshold voltage (VGS(th)) specifies the voltage required to turn the MOSFET on. Thermal characteristics, such as junction-to-case thermal resistance (RθJC), are crucial for thermal management.

When using the RFP60P03, ensure proper gate drive circuitry is implemented to achieve optimal switching performance. Heat sinking may be required for high-current applications to prevent overheating.

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