The HY628100BLLG-55 is a 1M-bit (128K x 8) low-power CMOS SRAM (Static Random-Access Memory) manufactured by Hynix Semiconductor. It's designed for applications requiring low power consumption, fast access times, and moderate memory density. The '55' in the part number indicates an access time of 55ns.

Applications

• Battery-backed applications
• Portable devices
• Embedded systems
• Data loggers
• Medical devices

Features

• Organization: 128K x 8 bits
• Access Time: 55 ns (nanoseconds)
• Power Supply Voltage: 3.3V or 5V (consult datasheet)
• Low Power Consumption: Designed for low-power operation.
• Operating Current: Low active current
• Standby Current: Very low standby current for battery-backed applications
• Package Type: TSOP (Thin Small Outline Package) or similar (consult datasheet)
• Operating Temperature Range: Industrial and commercial options (consult datasheet)

Benefits

• Low Power: Extends battery life in portable applications.
• Fast Access Time: Enables quick data retrieval for improved performance.
• High Density: Offers a good balance between memory capacity and physical size.
• Reliable Performance: Hynix's manufacturing ensures dependable operation.

Additional Details

The HY628100BLLG-55 utilizes CMOS technology, which contributes to its low-power characteristics. The datasheet for this specific part number provides detailed information on power consumption, timing specifications, and operating conditions. It is crucial to refer to the datasheet before using this component in a design to ensure proper functionality and to avoid potential damage. The BLLG suffix may indicate a specific version or characteristic of the part that's detailed in the datasheet. This SRAM is particularly well-suited for applications that require non-volatile memory with battery backup due to its extremely low standby current.