The 2SA1036KPT is a PNP epitaxial silicon transistor manufactured by Chenmko. It is designed for use in low-noise amplifier and general switching applications. The '2SA' designation indicates a PNP transistor, and the '1036' identifies its specific electrical characteristics and performance parameters. The 'KPT' suffix likely indicates a specific packaging or gain selection.

Applications

• Low-noise amplifier circuits
• Audio amplification stages
• Switching circuits in various electronic devices
• Current amplification
• General-purpose amplification

Features

• PNP Epitaxial Silicon Transistor: Utilizes PNP silicon technology for amplification.
• Low Noise Figure: Designed for minimal noise contribution in amplifier circuits.
• High Current Gain (hFE): Provides substantial current amplification.
• Low Saturation Voltage: Minimizes voltage drop when the transistor is fully turned on.
• Small Signal Amplification: Suitable for amplifying weak signals.
• Surface Mount Package: Likely available in a surface-mount package for automated assembly.

Benefits

• Improved Signal Quality: Low noise figure ensures minimal signal degradation in amplifier circuits.
• Efficient Amplification: High current gain provides substantial signal amplification with minimal power consumption.
• Reduced Power Loss: Low saturation voltage minimizes power dissipation in switching applications.
• Versatile Application: Suitable for a wide range of amplification and switching tasks.
• Simplified Assembly: Surface mount package facilitates automated assembly processes.

Technical Specifications

The following specifications are typical for the 2SA1036 series transistor. Refer to the Chenmko datasheet for the exact specifications of the 2SA1036KPT, as different suffixes might indicate variations in parameters.

• Collector-Base Voltage (VCBO): -50V (Typical)
• Collector-Emitter Voltage (VCEO): -50V (Typical)
• Emitter-Base Voltage (VEBO): -5V (Typical)
• Collector Current (IC): -50mA (Typical)
• Collector Dissipation (PC): 200mW (Typical)
• Current Gain (hFE): Varies depending on the gain selection (KPT)
• Transition Frequency (fT): 180 MHz (Typical)

It is important to consult the manufacturer's datasheet for the most accurate and up-to-date specifications for this component. Pay close attention to the gain selection indicated by the 'KPT' suffix, as it will influence the transistor's performance in specific applications.